Arsenic incorporation in GaN during growth by molecular beam epitaxy

Abstract

GaN grown by molecular beam epitaxy (MBE) has been studied extensively during the last decade. Because molecular nitrogen is too inert to be used in MBE growth, two different approaches have been used to provide active nitrogen, plasma-assisted MBE (PA-MBE) and ammonia-MBE. We have shown that PA-MBE using an RF plasma source can produce high quality AlN, GaN, InN and mixed group III-nitrides for a variety of applications. Nitrogen incorporation in GaAs is now extensively used for long wavelength laser applications. However, the incorporation of As in GaN during MBE has not been studied as intensively so far.