Abstract
This study examined associations between oxidative stress and arsenic (As) exposure and methylation efficiency in semiconductor workers. An As-exposed group (n = 427) and a control group (n = 91) were included. The As-exposure group (n = 427) included 149 maintenance staff members and 278 production staff members representing high As exposure and low As exposure, respectively. The control group included 91 administrative staff members with no or minimal As exposure. An occupational exposure assessment was conducted to assess personal As exposure by measuring As concentrations in urine, hair, and fingernails of the subjects. Urinary As(III), As(V), monomethylarsonic (MMA), and dimethylarsinic acid (DMA) were quantified to assess an internal dose of inorganic As. Urinary 8-hydroxy-2’-deoxyguanosine (8-OHdG) and malondialdehyde (MDA) were measured to asses oxidative DNA damage and lipid peroxidation, respectively. As concentrations in urine, hair, and fingernails significantly increased (p < 0.05) in the As-exposed group in comparison to the control group. Geometric mean urinary concentrations of As, 8-OHdG, and MDA in the As-exposed group significantly exceeded those in the control group. As exposure to As-exposed workers had increased concentrations of 8-OHdG in contrast to those in control subjects. Moreover, urinary 8-OHdG concentrations in the semiconductor workers were positively correlated with urinary total As metabolite (As(III) + As(V) + MMA + DMA) concentrations. Furthermore, urinary excretion of 8-OHdG concentrations in As-exposed workers were positively associated with urinary excretion of MMA concentrations and primary methylation index values (the ration of MMA/inorganic As). However, fingernail and hair samples did not perform as well as urinary samples to measure oxidative stress induced by As exposure. 8-OHdG could serve as a more reliable biomarker for assessing As methylation than MDA did. Occupational exposure to inorganic As was associated with increased oxidative stress among semiconductor workers.
Highlights
Inorganic arsenic (As) is extensively used in the semiconductor manufacturing process, during ion implantation to impart conductivity to the wafer [1,2]
Occupational exposure assessment studies reported that preventive maintenance engineers who regularly handle clean equipment and disposing of As wastes are exposed to higher As concentration as compared to other groups of semiconductor workers, e.g., operators
This study aimed to examine oxidative effects of both short- and long-term exposure to As in semiconductor workers based on job classification
Summary
Inorganic arsenic (As) is extensively used in the semiconductor manufacturing process, during ion implantation to impart conductivity to the wafer [1,2]. Each step of wafer fabrication involves a cleaning process. Due to the nature of the process, semiconductor workers risk exposure to Atmosphere 2020, 11, 464; doi:10.3390/atmos11050464 www.mdpi.com/journal/atmosphere. Exposure routes include inhalation of airborne particulate matter and toxic gas released during maintenance and cleaning activities [3]. Occupational exposure assessment studies reported that preventive maintenance engineers who regularly handle clean equipment and disposing of As wastes are exposed to higher As concentration as compared to other groups of semiconductor workers, e.g., operators. Upon entering the biological system, inorganic As is absorbed into the blood, where pentavalent arsenic (As(V)) involves a two-electron reduction and forms trivalent arsenic (As(III))
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