Abstract
Arsenic doping of ZnO nanowires for building blocks of potential nanoscale photonicdevices is reported. It was demonstrated in high-resolution transmission electronmicroscopy (HRTEM) and Raman spectroscopy that arsenic could be doped into thesubstitutional sites in ZnO lattice by post-annealing samples grown on GaAssubstrates without degradation of the crystalline and optical qualities. In a series ofphotoluminescence (PL) spectroscopy observations, arsenic-doped ZnO nanowires exhibitedemission due to acceptor-bound excitons at room temperature. The observed emissioncharacteristics implied that the dopant arsenic formed a hydrogen-like acceptor, suggestingthe feasibility of producing possibly p-type ZnO nanowires via a simple route.
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