Abstract
ABSTRACTSelf-diffusion on the As sublattice in intrinsic GaAs was investigated in a direct way by As tracer diffusion measurements using the radioisotopes 73As and 76As and in an indirect way by annealing of buried nitrogen doping layers in epitaxially grown GaAs/GaAs:N heterostructures. The latter experiments were analyzed by secondary ion mass spectroscopy and interpreted within the framework of the kick-out mechanism yielding the As diffusivities mediated by As interstitials IAs. Comparison of with tracer diffusion coefficients – including data reported in the literature–points to a substantial contribution of IAs to As diffusion in intrinsic GaAs under As-rich ambient conditions.
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