Abstract
Abstract Parameters of relevance to ion beam lithography and ion implantation masking have been determined for two polymer resists, PMMA and Microposit 23M. These have been bombarded with 50 keV As+ at low power densities in order to avoid blister formation. Loss of volatiles was found to cease and lateral stress (in PMMA) changes from tension to compression at a critical dose of 1015 ions cm−2. These parameters were measured using a triple quartz resonator technique (TRT). X-ray photoelectron spectroscopy (XPS) data indicate a loss of oxygen in the bombarded resists by reduction of −C=O groups. The arsenic concentration, measured by Rutherford Backscattering (RBS), rose linearly with As+ ion dose with 100% retention of As+ in the resists. A dose of 2 × 1012 ions cm−2 was required for full exposure of PMMA and the developed step height was found to correlate well with calculated arsenic range data.
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