Arrays of silicon drift detectors for an extraterrestrial X-ray spectrometer

Abstract

Arrays of Silicon Drift Detectors (SDD) were designed, produced and tested. These arrays are the central part of an X-Ray Spectrometer (XRS) for measuring the abundances of light surface elements (C–Fe) fluoresced by ambient radiation on the investigated celestial object. The basic building element (or cell) of the arrays consists of a single hexagonal SDD. Signal electrons drift toward the center of the hexagon where a very low capacitance anode is located. The hexagonal shape of an individual SDD allows for a continuous covering of large detection areas of various shapes. To match the number of SDD cells with the external Application Specific Integrated Circuit (ASIC), two arrays, one with 16 and another with 64 cells were developed. One side of SDDs, called the window side, is a continuous thin rectifying junction through which the X-ray radiation enters the detector. The opposite side, called the device side contains electron collecting anodes as well as all other electrodes needed to generate the drift field and to sink leakage current produced on Si–SiO 2 interface. On both sides of the detector array there is a system of guard rings, which smoothly adjusts the voltage of the boundary cells to the ground potential of the silicon outside the sensitive volume. The drift voltage inside the detector is generated by an implanted rectifying contact, which forms a hexagonal spiral. This spiral produces the main valley where signal electrons drift as well as the voltage divider to produce the drift field. System performance is shown by a spectrum of Mn X-rays produced by the decay of 55Fe.