Arrays of magnetic tunnelling junctions for field programmable logic gates

Abstract

In spin-logic, one gains the advantages of magnetic film elements, i.e. non-volatility, the possibility of fast operation, radiation hardness and non-destructive readout. Here, we experimentally demonstrate the feasibility of logic gate arrays, based on spin-dependent tunnelling elements, which can be separately programmed on-chip to form a logic OR, AND, NOR or NAND function. Key factors for the tunnelling junctions and the gate arrays as reproducibility of both the resistance and the magnetoresistance , TMR amplitude and switching behaviour are discussed and demonstrated.