Abstract
Uniformly distributed GaN nano-pillars have been successfully fabricated by inductively coupled plasma etching using self-organized Nickel nano-islands mask on GaN film. Ni nano-islands have been formed through the annealing under the ammonia. The size and distribution of GaN nano-pillars can be controlled by the thickness of Ni film and the NH3 annealing time. The optimum diameter and the density of GaN pillars by analyzing the top-view SEM images are about 350nm and 2.6×108cm−2, respectively. The photoluminescence (PL) measurements showed the improved optical properties and the strain relaxation in GaN nano-pillars compared to the bulk materials.
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