Abstract
This numerical investigation proposes to use a lamellar grating of doped semiconductors as the active region of a nanoplasmonic biosensing device. Working with highly doped semiconductors instead of a metal allows controlling the value of the plasma frequency. It is possible to reach a plasma frequency close to the range of detection of the sensor to improve its sensitivity. A red shift of the plasmonic resonance of 10.2 nm for a 10−2 refractive index unit increase can be achieved.
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