Arrays of Addressable Microcavity Plasma Devices

Abstract

Addressable microcavity plasma devices with two- or three-electrode, dielectric barrier designs have been fabricated in 20 times 20 or 50 times 50 device arrays in Si(100) and characterized in the rare gases. Each device comprises a metal/Si electrode structure, a dielectric stack, and an inverted square pyramid microcavity having an emitting aperture of 50times50 mum <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> or 100times100 mum <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . Arrays with filling factors of 11% and 25% [for (100 mum) <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and (50 mum) <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> device arrays, respectively] and a crossed electrode (passive matrix) geometry exhibit operating voltages in Ne of ~220-300 V (RMS) when driven by a 20-kHz sinusoidal driving voltage. Displacement currents are ~50% of those for previous Si microplasma device arrays, and when exciting the array with 100-140-V pulses, the rise time of the wavelength-integrated fluorescence is observed to be < 600 ns for pure Ne or Ne/5%Xe gas mixtures at a pressure of 700 torr. A full address and sustain pulse sequence has also been demonstrated with a symmetrical three-electrode device structure