Abstract
Low-power microstructured semiconductor neutron detector (MSND) devices have long been investigated as a high-efficiency replacement for thin-film diodes for thermal neutron detection. The detector devices were improved by stacking two 1cm2 devices and integrating their responses together to act as a single diode, increasing detection efficiency to over 42%. The need for larger active area devices has driven further improvement of the technology. A large active area device has been developed by arraying seventy-two 1cm2 devices together into two 6×6 configurations, dual-stacking them, and integrating their responses together in order to act as a single detector device. The intrinsic thermal neutron detection efficiency was found to be 7.03±0.04%. The leakage current of the 36cm2 device was −42nA at −5V bias and the capacitance was found to be 54pF at −5V bias.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
