Abstract
Amorphous hydrogenated silicon carbide films were grown from capacitively coupled low frequency argon–tetramethylsilane plasmas. Mass spectrometry, optical emission spectroscopy and electrostatic probe were used to identify electron properties and chemical species under various deposition conditions. Film microstructure and mechanical properties were also characterized. The main goal of this analysis was to better understand the relationships between process parameters, gas-phase composition, film microstructure and tribological properties. A preliminary modeling of the plasma reactor was also carried out. First simulation results confirmed the trends from gas-phase analyses.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
