Abstract
The two-step implantation of argon precursor ion (Ar + ) followed by boron ion (B + ) in single crystalline silicon at room temperature is discussed to activate boron implanted region by post heating at 300 followed by 400°C. The implantation of Ar + at a dose of 6.0 × 10 13 cm -2 at 70 keV with a projected range R p (Ar) of 80 nm followed by B + at 1.0 × 10 15 cm -2 and 15 keV with R p (B) of 62 nm caused crystalline disordered states with the effective disordered amorphous depth A eff of 32 nm, while the post heating of 300°C for 90 min followed by 400°C for 30 min markedly decreased A eff to 1.8 nm. The effective recrystallization by the post heating promoted activation of doped region associated with decrease in the sheet resistivity to 189 Ω/sq by the post heating. The activation ratio was estimated as 0.33 under the assumption of a hole mobility of 50 cm 2 /Vs in the boron implanted region.
Highlights
Low temperature processing is important to achieve the low thermal budget for fabricating semiconductor devices
This paper demonstrates that disordered states caused by the two-step implantation is effective for dopant activation at a low temperature
The two-step ion implantation of Ar+ and B+ followed by post annealing was investigated for activating boron implanted region by post heating at low temperatures of 300 and 400oC
Summary
Low temperature processing is important to achieve the low thermal budget for fabricating semiconductor devices.
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