Abstract
It is shown that bulk MOVPE-grown GaN can exhibit dramaticallyincreased near-band-edge and below-bandgap emission afterargon plasma etching. The temperature dependence of thenear-band-edge emission shows that donor-bound excitons are thedominant species in Ar-etched samples while free excitonsdominate spectra from unetched samples. Under UV illuminationand at low temperatures metastable behaviour is apparent fromthe defect-related blue and yellow luminescence bands. Theclear linkage between the yellow and blue emission bandsindicates that any microscopic model of the defect(s)associated with the yellow luminescence must also be able toexplain the blue luminescence. At room temperature, UVillumination over a period of time enhances the yellow emissionby a factor of 20 and it is shown that this effect can beemployed for room-temperature optical data storage andretrieval.
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