Abstract
ArF excimer laser(λ=193nm) lithography is emerging following KrF DUV lithography(λ=248nm ). 193nm lithography has proven its potential for feature sizes down to 0.15μmlines/spaces patterns using high NA(O.6) because of resolution improvement. However, in practical use of ArF technology, there are problems involved in the properties of photoresist. To solve these problems, we synthesized ArF polymer resin, poly(2- (2-hydroxyethyl) carboxylate-5-norbornene / 2-t-butylcarboxylate-5-norbornene/2-carboxylic acid-5-norbomene/Maleic anhydride), all of the main chains are composed of alicyclic unit. 2-(2-Hydroxyethyl) carboxylate-5-norbornene was found as a very suitable adhesion promoter. Using this resist, 0.15μm L/S pattern was obtained at 14mJ/cm2 doses, using an ArF stepper on the developer, 2.38wt% tetramethyl ammonium hydroxide aqueous solution.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
