Abstract
Area selectivity of bandgap tuning in the InGaAsP-InP multiquantum-well structure has been investigated using low temperature photoluminescence (PL). The bandgap blue-shift in the intermixed region was as much as 170 meV for a rapid thermal anneal of 30 s at 850/spl deg/C, and was controllable using annealing temperature and time. From samples with SiO/sub 2/ stripe patterns, clearly separated PL peaks were observed centered at 0.95 and 1.08 eV, each representing signals originating from the dielectric capped and exposed areas, respectively. In samples with stripes intervals less than 6 /spl mu/m, PL signals did not separate, but formed one broad spectrum due to lateral diffusion. The lateral diffusion was found less than 3.0 /spl mu/m.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Journal of Selected Topics in Quantum Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
