Abstract
Novel area-selective molecular layer deposition (AS-MLD) of polyimide (PI) on Cu versus native SiO2 was studied. By use of 1,6-diaminohexane (DAH) and pyromellitic dianhydride (PMDA) as precursors,...
Highlights
As the feature sizes in nanoelectronics keep scaling downward, conventional photolithography that has served as a long-term reliable approach for semiconductor nanofabrication is facing greater challenges than ever in terms of resolution, edge placement accuracy, and cost-efficiency.[1,2] Area-selective deposition (ASD) as an alternative scheme has been gaining a lot of interest lately.[3]
Self-assembled monolayers (SAMs) with −CH3 tail groups are commonly employed as surface modifiers to convert the substrate surface inert and prevent the subsequent ALD growth.[7−10] Alternatively, instead of deactivating the substrate surface, ASALD can be achieved by locally promoting the ALD growth on an otherwise inert substrate surface with the use of a prepatterned seed layer as a growth stimulator
RuCp2 and O2 were used as precursors at a deposition temperature of 250 °C so that the Ru film was deposited only on the seed layer patterns but not on bare SiO2.14 By using electron beam or ion-beam induced deposition (EBID or IBID) to write patterns of a thin noble metal seed layer before the ALD processes, area-selective atomic layer deposition (AS-ALD) of Pt12,13 and metal oxides[11] has been achieved by Mackus et al we extend this approach to selective deposition of an organic polymer by MLD using the catalytic effect of Cu
Summary
As the feature sizes in nanoelectronics keep scaling downward, conventional photolithography that has served as a long-term reliable approach for semiconductor nanofabrication is facing greater challenges than ever in terms of resolution, edge placement accuracy, and cost-efficiency.[1,2] Area-selective deposition (ASD) as an alternative scheme has been gaining a lot of interest lately.[3]. Self-assembled monolayers (SAMs) with −CH3 tail groups are commonly employed as surface modifiers to convert the substrate surface inert and prevent the subsequent ALD growth.[7−10] Alternatively, instead of deactivating the substrate surface, ASALD can be achieved by locally promoting the ALD growth on an otherwise inert substrate surface with the use of a prepatterned seed layer as a growth stimulator. Because of the great potential in semiconductor processing and catalysis,[17,18] AS-ALD that bases on the growth activation through a catalytic effect of the underlying substrate has been studied and reported in some papers. A novel approach for area-selective deposition of polyimide (PI) on Cu by MLD is studied This is the first AS-MLD process that exploits the catalytic effect of the underlying substrate surface to achieve the selective growth of organic polymers. Based on our experimental evidence and a well-known imidization mechanism of PI formation, a mechanism for the selective formation of the polymer with a novel structure on Cu by MLD is proposed
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