Abstract
We demonstrate area-selective epitaxy by migration-enhanced epitaxy with As 2 and As 4 as arsenic sources. The distinct whisker structure growing in [1 1 1]B direction is obtained when employing As 2 as an arsenic source, while (1 1 1)B facet is formed with As 4. The difference in the facet formation can be explained by the formation of As-trimer, which significantly reduces the growth rate of the (1 1 1)B surface. With As 2, area-selective epitaxy can be achieved at lower arsenic pressure condition, where less As-trimers are formed. Therefore, growth in the [1 1 1]B direction is enhanced.
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