Area selective epitaxy of anti-dot structure of GaAs by solid source MBE

Abstract

Area selective epitaxy of anti-dot structures of GaAs on GaAs substrates masked by SiO 2 has been investigated by using migration-enhanced epitaxy (MEE). By using this method, successful area selective epitaxy of anti-dot structures have been achieved at a substrate temperature of 590°C. The anti-dot area selective epitaxy has proved useful to grow equi-thickness layers regardless of the lateral structure. This characteristic is caused by the fact that, in the anti-dot epitaxy, the growth front always has negative curvature, which prevents the facet formation. As a result, flat layer growth is achieved over the whole network structure.