Abstract
Area selective deposition (ASD) of films only on desired areas of the substrate opens for less complex fabrication of nanoscaled electronics. We show that a newly developed CVD method, where plasma electrons are used as the reducing agent in deposition of metallic thin films, is inherently area selective from the electrical resistivity of the substrate surface. When depositing iron with the new CVD method, no film is deposited on high-resistivity SiO2 surfaces whereas several hundred nanometers thick iron films are deposited on areas with low resistivity, obtained by adding a thin layer of silver on the SiO2 surface. On the basis of such a scheme, we show how to use the electric resistivity of the substrate surface as an extension of the ASD toolbox for metal-on-metal deposition.
Highlights
Area selective deposition (ASD) of films only on desired areas of the substrate opens for less complex fabrication of nanoscaled electronics
Deposition only on desired areas would avoid the need for patterning and etching steps and allow for bottom-up fabrication of nanoscaled structures. This has motivated research into area selective deposition (ASD) by chemical vapor deposition (CVD) techniques.[1−3] The selectivity in ASD is usually achieved by changing the surface chemistry of the area where film growth is either desired or not desired to control the adsorption of precursor molecules to only specific areas on the substrate
We recently reported a new CVD method for deposition of metallic films where the free electrons in a plasma are used as reducing agents.[10]
Summary
Area selective deposition (ASD) of films only on desired areas of the substrate opens for less complex fabrication of nanoscaled electronics. We recently reported a new CVD method for deposition of metallic films where the free electrons in a plasma are used as reducing agents.[10] Because the method draws an electron current from the plasma to an electrically biased substrate, a conducting surface is needed to close the electric circuit allowing the electron current to flow from the plasma discharge to the bias power supply without any charge buildup.
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
