Abstract
A new strategy for allocating area, at layout, for enhancing the soft yield of R-2R ladders is introduced. In contrast to the conventional and convenient approach of allocating equal area to each R/2R bit-slice, the new strategy allocates progressively larger areas to higher-order bits. With this strategy, the INL yield for a fixed total resistor area as determined by local random variations in the sheet resistance is optimized. Simulation results show that the new area allocation strategy provides significant improvements in INL yield compared to what is achievable with the conventional area allocation strategy.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
