Abstract
This chapter discusses various types of signal readout architectures for CMOS image sensors, implementing ultra-low-noise conversion of photo-generated charge packets into digital output values. It is based on a detailed analysis of the different noise sources in a CMOS imager, the noise responses of column noise cancelling circuits using correlated double sampling (CDS) and correlated multiple sampling (CMS) techniques and a noiseless signal readout technique using a precise digitizer. Finally, a practical example for the design of a CMOS image sensor with single-photon resolution is presented, and the technological requirements for meeting the condition for room-temperature readout noise of significantly less than 1 electron are discussed.
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