Abstract
Complementary metal-oxide-semiconductor (CMOS)-compatible Ar+-implanted Si-waveguide p-i-n photodetectors operating in the mid-infrared (2.2 to 2.3 µm wavelengths) are demonstrated at room temperature. Responsivities exceeding 21 mA/W are measured at a 5 V reverse bias with an estimated internal quantum efficiency of 3.1%–3.7%. The dark current is found to vary from a few nanoamps down to less than 11 pA after post-implantation annealing at 350 °C. Linearity is demonstrated over four orders of magnitude, confirming a single-photon absorption process. The devices demonstrate a higher thermal processing budget than similar Si+-implanted devices and achieve higher responsivity after annealing up to 350 °C.
Highlights
As the maximum data rate of single-mode fiber reaches limits imposed by spurious optical nonlinearities, multiple efforts have been focused on methods to increase overall system capacity
When the bias voltage was reduced to 0 V, these devices had 41% of the measured had 41% of the measured photocurrent compared to that obtained at a bias of 5 V, while the dark photocurrent compared to that obtained at a bias of 5 V, while the dark current dropped to less than current dropped to less than 11 pA, resulting in over a six order of magnitude difference between the
With dark currents highcircuits responsivities, With currents andsuch high low responsivities, theseand detector are ideal these for usedetector in circuits are ideal for use in applications such as ring resonator stabilization applications such as ring resonator stabilization [26]
Summary
As the maximum data rate of single-mode fiber reaches limits imposed by spurious optical nonlinearities, multiple efforts have been focused on methods to increase overall system capacity. Efforts to increase capacity have been applied to photonic integrated circuits, such as, for example, the use of multimode silicon waveguides to support an aggregate data rate of 60 Gb/s [3,4]. In these examples, while spatial-mode-division multiplexing techniques were a key component to achieving the high capacities in each of these links, wavelength division multiplexing (WDM) played a critical role. One straight-forward approach to achieving increased data rates for WDM is to expand into additional wavelength bands; this approach includes reaching further into the infrared, as demonstrated in [5]
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