Ar implantation of InSb and AlN at 15 K

Abstract

Ar ion implantation-induced damage formation in InSb and AlN was studied by Rutherford backscattering spectrometry with both implantation and measurement being performed at 15K without change of the target temperature. InSb can be easily amorphised with ion fluences ⩾8×1012cm−2. AlN is not rendered amorphous for ion fluences up to 5×1015cm−2. The main reason for that difference is that in InSb each ion produces amorphous material, whereas in AlN only point defects or point defect complexes remain from a single ion impact. A comparison with the results for other III–V compounds is given.