Abstract
Thick Si/SiO 2 multilayered films with flat interfaces are needed to achieve optical devices with low optical propagation losses, such as a laminated polarization splitter operating at a 1 550 nm wavelength. Such films can be realized by a sputtering method using an Ar/H 2 gas mixture because of the successful reduction of internal stress and surface roughness of films compared with those of conventional ones. We fabricate 350 μm thick Si:H/SiO 2-x:H multilayered films having flat interfaces by such a hydrogénation technique. The absorption losses at 1 550 nm wavelengths of both films measured separately are negligibly small.
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