Abstract
Ar gas cluster ion beam (GCIB) sputtering of InSb was investigated, and the sputtering rate and depth resolution of time‐of‐flight secondary ion mass spectrometry sputter depth profiling were examined. The practical sputtering rate for InSb using 20 keV Ar2500+ irradiation was confirmed at the incident angles of 0°, 40°, and 60°, and the sputtering rate was too low to perform sputtering at 80°. The preferential sputtering and surface roughness observed under GCIB irradiation was lower than that observed under 3 keV Ar+ irradiation. Characteristic ripple formation was confirmed under 20 keV Ar2500+ irradiation and had a strong influence on the depth resolution. The highest depth resolution was obtained at the incident angle of 0° because no ripple formation occurred and the level of surface roughness was low among the irradiation of GCIB at incident angles of 0°, 40°, and 60°. The present results revealed that GCIB sputtering is an effective method for sputter depth profiling of InSb. Copyright © 2014 John Wiley & Sons, Ltd.
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