Aqueous synthesis of photoluminescence enhanced CuInS2/ZnS quantum dots via the facile hot injection growth of AgInS2 interlayer

Abstract

In this study, the hot injection of Ag ions to enhance the PL performance of aqueous-phase CuInS2/ZnS quantum dots (QDs) via the formation of AgInS2 interlayer is first developed. Different amount of Ag doping by hot injection realizes the precise tuning of the peak wavelength from 649 nm to 684 nm, while the photoluminescence quantum yield is also improved from 14.79% to 26.8% due to the formation of the AgInS2 interlayer on the surface of CuInS2 QDs. The results of various characterizations demonstrate the formation of AgInS2 interlayer and explain the enhanced PL performance of CuInS2 QDs. This will expand the understanding of the PL enhancement of the aqueous-phase CuInS2/ZnS QDs and solidify the foundation for subsequent practical research to further realize the potential of aqueous CuInS2 QDs.