Abstract
Increasing visible light harvesting and improving charge carrier separation and transfer efficiency are crucial for photocatalytic H2O2 generation using graphitic carbon nitrides (g-C3N4) based catalysts. In this paper, a high temperature solid synthesis was developed to create water stable SiO2 glass coated CsPbI3 (CsPbI3@SiO2) quantum dots (QDs) with high brightness and extraordinary stability. These CsPbI3@SiO2 QDs were implanted in superior thin g-C3N4 nanosheets via a solvothermal synthesis. The red-emission of CsPbI3 QDs and the blue emission of g-C3N4 nanosheets were quenched after incorporation to confirm that photogenerated electron transition occurred. The further polymerization of g-C3N4 during solvothermal treatment resulted in CsPbI3@SiO2/g-C3N4 with well-developed interface to improve the charge transfer efficiency. A type II heterostructure formed after CsPbI3@SiO2 QDs incorporated with g-C3N4 nanosheets. The heterostructure revealed enhanced photocatalytic H2 and H2O2 generation, in which the evolution rate of H2O2 was 2454.4 μmol·g−1·h−1 while the photocatalytic H2 generation rate was 2463.1 μmol·g−1·h−1. The mechanism test indicated that the photocatalytic production of H2O2 was carried through a two-step single-electron redox process. Superoxide radicals were important intermediates for the generation of H2O2. This study provides a new scheme for the preparation of g-C3N4 based heterojunction photocatalyst for efficient photocatalytic production of H2O2 and H2.
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