Abstract
Material screening of gate dielectrics for complementary metal oxide semiconductor applications is often complicated by the inability to deposit test samples. We examine the aqueous chemical solution deposition (CSD) technique as a simple, inexpensive, and fast technique to deposit thin metal-oxide layers. We deposited Nd 2 O 3 layers on 1.2 nm SiO 2 . The thinnest stack (7.2 nm) yielded an equivalent oxide thickness (EOT) of 3.1 nm with a gate-leakage current of 1.4 X 10 -6 A/cm 2 at V FB - 3 V. EOT scales linearly with physical thickness, allowing a k-value extraction, approximately 14. Our results suggest that aqueous CSD is a viable method for fast gate-dielectrics screening.
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