Abstract
Cadmium telluride (CdTe) is immensely interesting narrow band gap semiconductor with high electrical conductivity having promising applications in new-generation electronics and photo-electronic devices. In the present study, CdTe thin film was fabricated by thermal evaporation technique onto pre-cleaned glass substrate. The EDAX result indicates that the prepared thin film has non-stoichiometric nature. The SEM image revealed that the film is continuous and free form defects. The optical band gap is about 1.53 eV evaluated using absorption spectra. Using photo-response characterization, the responsivity (R*), specific detectivity (D), internal quantum efficiency (IQE) and external quantum efficiency (EQE) are determined as a function of illumination intensity. The effect of cycle numbers and applied voltage on the growth and decay parameters such as dispersion parameters (α), characteristic temperature (To) and localized state distribution parameter (Eo) are determined. The trap depth parameters of CdTe thin film is explicated on the basis of defect controlled photoconductivity mechanism. These results confirm that the CdTe thin film is a capable contender for photo-detection applications.
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