Approaches to improving the accuracy in X-ray fluorescence analysis of Si1 − x Ge x films

Abstract

This work examines approaches to improving the accuracy in the X-ray fluorescence determination of the composition and thickness of thin Si1 − xGex films on Polikor alumina substrates. We calculate correction coefficients that take into account the interelement effects in the films and demonstrate the possibility of reaching the required accuracy level in determining film composition and thickness. The results are used to optimize conditions for the preparation of films with tailored electrical properties.