Abstract
Silicon samples of well-known nickel content have been produced by ion implantation in the dose range from 1017 to 1018 Ni/cm2. Such implants are used for the comparison of different approaches for quantitative Auger electron analysis. Considerable differences are found between results obtained from peak-to-peak heights in the differentiated energy spectrum, neglecting composition-dependent changes of the line widths, and those results calculated with consideration of variations of the line widths. Matrix effects are taken into account by the inclusion of backscattering factors and escape depths. The results show that the elemental composition for the Ni/Si system cannot be accurately determined over the whole dose range. The discrepancies are attributed to sputter-induced composition changes or incorrect theoretical matrix factors.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
