Abstract
AbstractAn analytical study has been carried out to evaluate the quantitative amount of strain and its distribution in bulk Inx Ga1–x As crystals grown by the two‐step multi‐component zone melting (MCZM) method. With the combination of Raman scattering, photoluminescence and energy dispersive X‐ray experiments, it has been confirmed that there exists large amount of strain in bulk Inx Ga1–x As crystals grown by the two‐step MCZM method due to approximately exponential variation of composition from 0.06 to 0.29 in the first step growth process. Using an axially symmetrical strain model, the quantitative amount of strain and its distribution have been studied for various compositional profiles including the currently used profile. It has been found that the strain and its distribution are strongly dependent on the shape of the compositional profile. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
