Abstract
Wide-bandgap (WBG) devices such as Gallium-Nitride (GaN) High Electron Mobility Transistors (HEMTs) have become popular in the power electronics industry as they offer a lower switching loss, higher thermal capability and higher power density than conventional silicon devices. As an attempt of applying WBG devices to the wireless charging technology, this paper adopts two different types of normally-off GaN HEMTs. One adopts the cascode structure provided by Transphorm Inc, operated under 800kHz to charge a battery pack on an electric scooter at 48 V/500W, with the air gap between the transceiver and receiver of ~10cm. The other is enhancement-mode GaN HEMTs provided by GaN Systems Inc, operated at ~6MHz to use one transceiver to charge multiple cell phones @~20W. Both of these chargers have no magnetic cores to reduce the cost and weight. Experimental results show both types of GaN HEMTs significantly increased the charging efficiency over conventional Si devices. Challenges of applying such fast-transition devices are discussed, e.g., common-source inductance and the gate-drive-loop parasitic.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: CES Transactions on Electrical Machines and Systems
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
