Abstract
Since 1979 various papers and have been published on modeling the gate dielectric using Time Dependent Dielectric Breakdown (TDDB) testing. There are primarily 2 models used, the linear E field model and the 1/E field model. These are based on different failure kinetics and both predict vastly different lifetimes for the dielectric. As a result the majority of I.C. manufacturers used the 1/E model for reliability predictions.
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