Abstract
We have developed and proposed a model for reactive ion etching (RIE) processdesign of nickel oxide thin films using a computational materials design based onab initio calculations. On etching NiO, we found that it was necessary to havehydrogen-based reactive gases in the initial state in order to enhance RIE(e.g. NH3,CH4). We strongly suggestthe use of CH4 or any H-basedgas source other than CHF3 to enhance RIE process.
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