Abstract
The operation and reliability of nonvolatile memory concepts based on charge storage in nitride layers, such as TANOS (TaN/Al2O3/Si3N4/ SiO2/Si), require detailed information on the energy and spatial distribution of the charge defects in both the nitride and the Al2O3 blocking dielectric. This paper focuses on the characterization of Al2O3. We have successfully applied complementary trap characterization techniques to crystalline γ-phase- Al2O3 in order to obtain a complete picture of the spatial and energetic distribution of the defect density. As a result, two defect types at energy levels 1.8 and 3.5 eV below the conduction band edge are found.
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