Abstract
Metal halide perovskite (MHP) materials are now investigated as the active layer of semiconductor devices such as solar cells and light-emitting diodes (LEDs). Perovskite LEDs (PeLEDs) with high-quality made by a cost-effective process are needed to achieve a commercialized PeLED. To reach this goal, modifying and surface engineering the perovskite emissive thin films can be helpful. The manufacturing process must be economical and time-saving for fabricating an effective commercial device. This work presents an effective postprocessing method to recrystallize the perovskite emissive layer. The method includes both annealing and plasma treatment, which takes a short time and does not need vacuum tools. Applying this process results in a reduction of the MAPbBr3 grain size. It also increases perovskite emitters' carrier recombination rate and photoluminescence quantum yields (PLQY). These results indeed can increase luminance (∼68500 cd/m2), External quantum efficiency (EQE, ∼20.5%), and lifetime (∼350 min).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
