Abstract
With the rapid consumption of energy, clean solar energy has become a key study and development subject, especially the when new renewable energy perovskite solar cells (PSCs) are involved. The doping method is a common means to modulate the properties of perovskite film. The main work of this paper is to incorporate trace amounts of alkali metal elements into the perovskite layer and observe the effects on the properties of the perovskite device and the majority carrier type of the perovskite film. Comparative analysis was performed by doping with Na+, K+, and Rb+ or using undoped devices in the perovskite layer. The results show that the incorporation of alkali metal ions into the perovskite layer has an important effect on the majority carrier type of the perovskite film. The majority carrier type of the undoped perovskite layer is N-type, and the majority carrier type of the perovskite layer doped with the alkali metal element is P-type. The carrier concentration of perovskite films is increased by at least two orders of magnitude after doping. That is to say, we can control the majority of the carrier type of the perovskite layer by controlling the doping subjectively. This will provide strong support for the development of future homojunction perovskite solar cells. This is of great help to improve the performance of PSC devices.
Highlights
The astonishing development of the economy has imposed challenges for the energy industry and made it indispensable [1]
The incorporation of Na+ or K+ resulted in a red shift in absorption edge and band gap shrinkage, whereas the incorporation of Rb+ caused a blue shift and band gap increase
Scanning electron microscopy and X-ray diffraction (XRD) patterns were performed on the PbI2 film and the perovskite film of the samples
Summary
The astonishing development of the economy has imposed challenges for the energy industry and made it indispensable [1]. Concerning modulating the carriers type of behavior, it is relevant to look at the internal charge anomaly distribution of PSCs [28] These studies provide a theoretical basis for the extrinsic doping of perovskite to change the majority of carrier types, contributing to solving challenges impeding the development of homojunction in perovskite. We used different alkali metal elements to study the extrinsic doping of the perovskite layer, and experimental data showing that CH3 NH3 PbI3 (MAPbI3 ) can be used for extrinsic doping from the N-type to P-type are provided This revealed that the physical properties of perovskite thin films can be modulated by controlling precursor solution compositions and doping craft, leading to the change in the majority carrier type and demonstrating a promising platform for opening new horizons in homojunction PSCs
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