Abstract
The behaviour of cyclotron masses for n-type Si(100)/SiO 2 inversion layers under stress is explained by means of a charge-density-wave model. The model yields: (1) the observed occupied valley degeneracy of two; (2) a cyclotron mass which varies as a function of stress or as a function of electron number density between 0.19 m e and 0.42 m e; (3) a charge-density-wave solution only for a restricted range of stresses, with a different paramagnetic solution at each boundary of this range. Of the two tramsitions one is first order and the other second order both as a function of stress and carrier density. The approximations in the calculation are discussed.
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