Abstract
TiN thin films have interesting applications in silicon device technology. We show that TiN is a very efficient barrier for silicon diffusion in metallizations to silicon and discuss implications for high-temperature-resistant and reliable contacts to silicon power devices. The barrier height of TiN on n-type silicon was found to be 0.49 V, allowing the fabrication of low barrier Schottky diodes on high resistivity material and good ohmic contacts to low resistivity n- and p-type material. Finally, we present results on the oxidation kinetics of TiN and the preparation of metaloxide- semiconductor capacitors and field effect transistors with TiN as the gate material.
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