Abstract
The scanning electron microscope is rapidly becoming an extremely powerful tool for studying active semiconductor devices. This tool gives an essentially non-destructive means of studying both the bulk and surface electrical characteristics of the device under high magnification. The mapping of electrical potential gradients on the surface of a device under bias is a valuable aid in reliability prediction as well as failure anal-sis of completely non-working or marginally operating devices. Bulk properties (i.e. p-n or isolation junctions) can be studied in the scanning microscope using the specimen conductive mode. This paper will be restricted to the surface potential gradients using the emissive mode(secondary electron signal) for image display.
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Schedule a callMore From: Proceedings, annual meeting, Electron Microscopy Society of America
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