Abstract
Features of SIMOX technology, and its application to CMOS LSI and radiation-hardened devices have been reviewed. One of the major problems regarding to this technology was that it had been quite impractical, since it took a great deal of time to form a buried silicon oxide by using a conventional ion implanter. A high-current oxygen implanter which has an acceleration energy of 200 keV and a beam current of 100 mA has been developed to solve the problem in SIMOX. The newly developed high-current oxygen implanter, NV-200, has been used to form SIMOX wafers, on which p- and n-channel MOSFETs have been successfully fabricated on a trial basis. It has been shown that NV-200 can greatly promote SIMOX technology in a practical way.
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