Applications of II–VI diluted magnetic semiconductors for magneto-electronics

Abstract

The discovery of carrier induced ferromagnetism in p-type doped diluted magnetic semiconductors (DMS) with Curie temperatures actually up to 110 K in Ga 1− x Mn x As, as well as the demonstration of high spin injection efficiency observed from II–VI and III–V DMS [1,2] have recently renewed strongly the interest in DMS. In this paper, we present an overview of the recent experiments we have performed on spin injection light emitting diodes using an n-type doped II–VI DMS layer as spin aligner and on p-type doped II–VI magnetic heterostructures: Cd 1− x Mn x Te quantum wells and Zn 1− x Mn x Te epilayers.