Abstract
Three dry etching processes using a high ion density inductively coupled plasma (ICP) system in fabrication of optoelectronic device have been briefly presented in this paper. Smooth etched surface, high rate and selectivity ICP InP etching using Cl 2 /CH 4 /N 2 have been demonstrated first time in fabrications of semiconductor laser. Low damage CH 4 /H 2 ICP InP sub-micron grating etching using SiN x mask can be used for SG-DBR tunable laser fabrication. Anisotropic Cl 2 /CH 4 /Ar ICP etching with vertical profile has been used for GaAs/AlGaAs DBR layers etching in vertical cavity surface emitting laser (VCSEL) fabrication. The etching characteristics have been investigated by conventional optical microscopy and scanning electron microscopy (SEM).
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