Abstract
Using a focused ion beam of Ga+ ions at 25 keV, one can obtain usable beams as small as 50 nm in diameter. As a result of this, small and precise areas can be milled to obtain cross sections, small vias, and cut metal lines. Additionally, the ion beam can be used to induce metal deposition. This deposition allows nondestructive design changes directly on the device, and provides increased failure analysis capabilities. Examples on the use of the FIB for such applications are given and some drawbacks are discussed. Methods employed to overcome the drawbacks also are discussed.
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