Abstract
ABSTRACTFocused-ion-beam (FIB) technology has been applied during the past decade to a wide variety of device and circuit fabrication procedures. The ability to perform maskless implantation, selective sputtering and deposition, and high resolution lithography with a single system has allowed FIB researchers to explore a large number of unique fabrication processes for silicon, GaAs, and heterojunction devices. Currently, exploratory studies in advanced optoelectronic device fabrication employ the largest number of diverse FIB techniques. In this paper, the major application areas of FIB technology to optoelectronic research are reviewed, and possible uses of ultrasmall (≤500 Å) ion beams in the fabrication of optoelectronic device structures with novel properties are described.
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