Abstract
In the 2D material framework, molybdenum disulfide (MoS2) was originally studied as an archetypical transition metal dichalcogenide (TMD) material. The controlled synthesis of large-area and high-crystalline MoS2 remains a challenge for distinct practical applications from electronics to electrocatalysis. Among the proposed methods, chemical vapor deposition (CVD) is a promising way for synthesizing high-quality MoS2 from isolated domains to a continuous film because of its high flexibility. Herein, we report on a systematic study of the effects of growth pressure, temperature, time, and vertical height between the molybdenum trioxide (MoO3) source and the substrate during the CVD process that influence the morphology, domain size, and uniformity of thickness with controlled parameters over a large scale. The substrate was pretreated with perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS) seed molecule that promoted the layer growth of MoS2. Further, we characterized the as-grown MoS2 morphologies, layer quality, and physical properties by employing scanning electron microscopy (SEM), Raman spectroscopy, and photoluminescence (PL). Our experimental findings demonstrate the effectiveness and versatility of the CVD approach to synthesize MoS2 for various target applications.
Highlights
Transition metal dichalcogenides (TMDs) are gaining tremendous interest for their potential use in wide range of applications [1]
During the chemical vapor deposition (CVD) synthesis, the growth of transition metal dichalcogenide (TMD) is governed by several factors, such as pressure, growth temperature, growing time, and substrate position
Keeping the growth temperature at 750 ◦ C, we explored the effect of MoS2 growth at different pressures, namely 400 torr (5 × 104 Pa), 600 torr (8 × 104 Pa), and 760 torr (1 × 105 Pa), varying the Ar flux rate from 30 sccm to 1000 sccm in multiple steps during the CVD process
Summary
Transition metal dichalcogenides (TMDs) are gaining tremendous interest for their potential use in wide range of applications [1]. Among TMDs, molybdenum disulfide (MoS2 ) has so far received the largest consideration for its promising potential in various fields such as electronics, optoelectronics, and electrocatalysis due to its unique optical, electrical, and chemical properties [2,3]. As a TMD in the 2H structural phase, MoS2 undergoes a transition from an indirect bandgap (1.3 eV) in the bulk to a direct gap in the single layer (1.8 eV) [6]. Monolayer MoS2 has outstanding properties, such as wide direct bandgap, intense light–matter interactions, strong spin–orbit coupling, and high carrier mobility [2]. In electronics and optoelectronics, such characteristics make monolayer MoS2 attractive for building field effect transistors, photodetectors, chemical
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