Abstract
This paper presents three types of low-side gate drivers to drive n-channel power metal-oxide-semiconductor field-effect transistors (MOSFETs). Most important of all, each gate driver has a single positive-voltage source fed, and any one of these three types is used according to applications. In addition, the main purpose of the proposed gate drivers is to reduce the losses created from power MOSFETs. In this paper, the detailed operating principles of the proposed gate drivers are illustrated, along with some experimental results provided to verify the feasibility of the proposed topologies.
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