Abstract
In this paper, the evolvement of power supply with wide bandgap semiconductor, including SiC and GaN devices, is reviewed. Different circuit features are analyzed with unique device characteristics. By employing GaN HEMTs, the power convertor hardware is compared with conventional design. The detailed architecture of convertor is given to evaluate the trend of the next generation power convertors enabled by wide bandgap devices. Practical design is implemented to prove high eliiciency and high density with simplified circuit and auto-manufactory. Based on the analysis of hardware, some relevant issues are discussed in the following part, regarding the technical challenges for the application of SiC/GaN and further optimization targeting different applications.
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